8 research outputs found
FUENTES, JOSEFA, HERNÁNDEZ, LOLINA [Material gráfico]
BCopia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201
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Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors
The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors
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Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts at lower dose rates. The additional trapped charge near the interface may cause an exponential increase in excess base current, and a resultant decrease in current gain for some NPN bipolar technologies
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Accelerated tests for bounding the low dose rate radiation response of lateral PNP bipolar junction transistors
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated irradiations performed at approximately 135 degrees C. Degradation enhancement is explained by temperature- dependent radiation-induced interface trap formation above the transistor`s base
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Measurement bias dependence of enhanced bipolar gain degradation at low dose rates
Oxide trapped charge, field effects from emitter metallization, and high level injection phenomena moderate enhanced gain degradation of lateral pnp transistors at low dose rates. Hardness assurance tests at elevated irradiation temperatures require larger design margins for low power measurement biases